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Nanoelectronic modeling: electronic structure and transport at the atomic scale

Prof. Gerhard Klimeck
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA

16 hours, 4 credits

October 5 - October 9, 2009

Dipartimento di Ingegneria dell'Informazione: Elettronica, Informatica, Telecomunicazioni, via Caruso, meeting room, ground floor

Contacts: Prof. Giuseppe Iannaccone

Aims

The goal of this series of lectures is to provide an overview of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, and nanowires. At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. The importance of the appropriate basis set representation which needs to be selected to cover the important physics of semiconductor devices will become evident. The lectures will not focus on the underlying theories, but focus on the application of the theories using the nanoelectronic modeling tools NEMO 1-D, NEMO 3-D, and OMEN to realistically extended devices. Basic device operations and advanced simulations will be explored through interactive online simulations on http://nanoHUB.org

Syllabus

Overview of http://nanoHUB.org
Overview of established simulation approaches and their range of applications
Resonant tunneling diodes (1D quantzation, transport, scattering, bandstructure, extended contacts)
Quantum dots (3D quantization, long range strain, effects of disorder)
Nanowires and Ultra Thin Body Transistors (2D or 1D quantization, band to band tunneling, disorder)